rej03g0163-0500 rev.5.00 nov 27, 2007 page 1 of 6 HAT2085T silicon n channel mos fet high speed power switching rej03g0163-0500 rev.5.00 nov 27, 2007 features ? low on-resistance ? low drive current ? high density mounting outline renesas package code: ptsp0008jb-b (package name: tssop-8 < ttp-8dv> ) 1, 2, 3 source 4 gate 5, 6, 7, 8 drain 1 2 3 4 8 7 6 5 g d s 4 5 d 6 2 d 7 d 8 s s 13 absolute maximum ratings (ta = 25 c) item symbol value unit drain to source voltage v dss 200 v gate to source voltage v gss 30 v drain current i d 1.4 a drain peak current i d (pulse) note 1 11.2 a body to drain diode reverse drain current i dr 1.4 a channel dissipation pch note 2 1.3 w channel temperature tch 150 c storage temperature tstg ?55 to +150 c notes: 1. pw 10 s, duty cycle 1% 2. when using the glass epoxy board (fr4 40 40 1.6 mm), pw 10 s
HAT2085T rej03g0163-0500 rev.5.00 nov 27, 2007 page 2 of 6 electrical characteristics (ta = 25 c) item symbol min typ max unit test conditions drain to source breakdown voltage v (br) dss 200 ? ? v i d = 10 ma, v gs = 0 gate to source leak current i gss ? ? 0.1 a v gs = 30 v, v ds = 0 zero gate voltage drain current i dss ? ? 1 a v ds = 200 v, v gs = 0 gate to source cutoff voltage v gs (off) 3.0 ? 4.5 v i d = 1 ma, v ds = 10 v static drain to source on state resistance r ds (on) ? 0.49 0.64 ? i d = 0.7 a, v gs = 10 v note 3 forward transfer admittance |y fs | 1.0 1.7 ? s i d = 0.7 a, v ds = 10 v note 3 input capacitance ciss ? 300 ? pf output capacitance coss ? 43 ? pf reverse transfer capacitance crss ? 12 ? pf v ds = 25 v v gs = 0 f = 1 mhz turn-on delay time t d (on) ? 21 ? ns rise time t r ? 11 ? ns turn-off delay time t d (off) ? 48 ? ns fall time t f ? 18 ? ns v dd ? 100 v, i d = 0.7 a v gs = 10 v r l = 143 ? rg = 10 ? total gate charge qg ? 10 ? nc gate to source charge qgs ? 1.8 ? nc gate to drain charge qgd ? 4.8 ? nc v dd = 160 v v gs = 10 v i d = 1.4 a body to drain diode forward voltage v df ? 0.8 1.2 v i f = 1.4 a, v gs = 0 note 3 body to drain diode reverse recovery time t rr ? 65 ? ns i f = 1.4 a, v gs = 0 di f /dt = 100 a/ s note: 3. pulse test
HAT2085T rej03g0163-0500 rev.5.00 nov 27, 2007 page 3 of 6 main characteristics channel dissipation pch (w) ambient temperature ta (c) power vs. temperature derating drain to source voltage v ds (v) drain current i d (a) typical output characteristics gate to source voltage v gs (v) drain current i d (a) typical transfer characteristics 2.0 0 0.5 1.0 1.5 0 50 100 150 200 10 0 2 4 6 8 048121620 10 0 2 4 6 8 0246810 gate to source voltage v gs (v) drain to source saturation voltage v ds (on) (v) drain to source saturation voltage vs. gate to source voltage 2.0 0 0.5 1.0 1.5 0 5 10 15 20 test condition: when using the glass epoxy board (fr4 40 40 1.6 mm), pw 10 s pulse test 6 v 7 v 5 v 8 v 10 v v gs = 4.5 v 1.0 a 0.5 a i d = 1.4 a pulse test 25c v ds = 10 v pulse test ?25c tc = 75c drain to source voltage v ds (v) drain current i d (a) maximum safe operation area 100 0.1 0.01 10 1 0.001 0.1 1 100 10 1000 note 4: when using the glass epoxy board (fr4 40 40 1.6 mm) operation in this area is limited by r ds (on) ta = 25c 1shot pulse 10 s 1 ms 100 s note 4 pw = 10 ms dc opera tion (pw 10 s) drain current i d (a) drain to source on state resistance r ds (on) ( ? ) static drain to source on state resistance vs. drain current 0.1 0.2 5 0.5 1 2 50 10 20 100 10 5 2 0.5 1 0.2 0.1 pulse test v gs = 10 v
HAT2085T rej03g0163-0500 rev.5.00 nov 27, 2007 page 4 of 6 capacitance c (pf) drain to source voltage v ds (v) typical capacitance vs. drain to source voltage 020406080100 1000 500 200 100 50 20 10 5 2 1 ciss coss crss v gs = 0 f = 1 mhz case temperature tc ( c) static drain to source on state resistance r ds (on) ( ? ) static drain to source on state resistance vs. temperature forward transfer admittance |y fs | (s) drain current i d (a) forward transfer admittance vs. drain current 2.0 ?25 0 50 25 75 100 125 150 0 0.5 1.0 1.5 0.5 5 2 0.1 1 10 0.2 5 10 0.5 0.2 1 2 0.1 drain current i d (a) switching time t (ns) switching characteristics 400 0 100 200 300 048121620 0 4 8 12 16 gate charge qg (nc) drain to source voltage v ds (v) gate to source voltage v gs (v) dynamic input characteristics 1 10 100 1000 1000 500 50 200 100 20 10 reverse drain current i dr (a) reverse recovery time t rr (ns) body to drain diode reverse recovery time 100 300 10 3 0.1 0.2 0.5 5 20 2 110 1000 30 1 v ds = 10 v pulse test v gs v ds i d = 2 a v dd = 50 v 100 v 160 v tc = ?25c 25c v dd = 160 v 100 v 50 v 75c v gs = 10 v pulse test 0.5 a i d = 1.4 a di / dt = 100 a / s v gs = 0, ta = 25c v gs = 10 v, v dd = 100 v pw = 5 s, duty 1 % rg = 10 ? t f t f t d(off) t d(on) t r t r
HAT2085T rej03g0163-0500 rev.5.00 nov 27, 2007 page 5 of 6 source to drain voltage v sd (v) reverse drain current i dr (a) reverse drain current vs. source to drain voltage 5 ?25 0 50 25 75 100 125 150 0 1 2 3 4 case temperature tc (c) gate to source cutoff voltage vs. case temperature gate to source cutoff voltage v gs (off) (v) 10 0 2 4 6 8 0 0.4 0.8 1.2 1.6 2.0 t r t d(on) vin 90% 90% 10% 10% vout t d(off) 90% 10% t f switching time test circuit switching time waveform vin monitor d.u.t. vin 10 v r l vout monitor 10 ? v dd = 100 v v ds = 10 v i d = 10 ma 10 100 1 m 10 m 100 m 1 10 100 1000 10000 10 1 0.1 0.01 0.001 0.0001 d = 1 0.5 0.2 0.1 0.05 0.02 0.01 1shot pu lse pulse width pw (s) normalized transient thermal impedance vs. pulse width normalized transient thermal impedance s (t) p dm pw t d = pw t ch ? f (t) = s (t) ch ? f ch ? f = 139c/w, ta = 25c when using the glass epoxy board (fr4 40 40 1.6 mm) 1 ma pulse test 5 v v gs = 0 10 v 0.1 ma
HAT2085T rej03g0163-0500 rev.5.00 nov 27, 2007 page 6 of 6 package dimensions p-tssop8-4.4 3-0.65 0.037g mass[typ.] ttp-8dv ptsp0008jb-b renesas code jeita package code previous code f b p c 0.60 1.0 0.40 l 1 0.50 0.13 x 0.25 0.20 0.15 0.03 b p b 1 c 1 0.20 0.15 0.10 max nom min dimension in millimeters symbol reference 3.30 3.00 d 4.40 e 0.07 a 2 6.60 6.40 6.20 0.10 1.10 a 0.805 z l 8 0 c 0.65 e 0.10 y h e a 1 d * 1 a 1 4 8 5 * 3 x m b p e z * 2 e h e terminal cross section (ni/pd/au plating) 2. 1. dimensions " * 1(nom)" and " * 2" do not include mold flash. note) dimension " * 3" does not include trim offset. a 1 l 1 l detail f y index mark package name tssop-8 ordering information part no. quantity shipping container HAT2085T-el-e 3000 pcs taping
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